234. Basic Electronic

FIRST TERM:
	PN-junction, Depletion layer, Barrier potential, Forward and reverse bias, 
	Breakdown voltage, piv. Characteristics of P-N junction diode knee voltage, 
	load line, and opt. Ideal P-N junction diode, junction capacitance, zener diode.

	Rectifiers and filters-Half wave, centre tap full wave  and  bridge rectifier, 
	percentage of regulation, piv. ripple factor, C, RC, LC and P1 filter, 
	voltage doublle, clipping and clamping ckt, voltage regulation. -

	BJT-Introduction, Basic theory of operation of PNP ad NPN transistor, 
	V-I characteristics, CB, CE and CC configuration, Junction  FET-Introduction,  
	Theory  of operation JFET parameters, JFET Amplifiers.

	MOSFET-  Introduction,  Theory  of  operation  MOSFET parameters application.
	Graphical analysis of BJT & FET circuit, Linear modules of BJT & PET.
	Pulse and large signal models of BJT & FET.

SECOND TERM:
	Basic BJT & FET Amplifiers,

	Introductory idea of multistage & feedback ampIifier.

	Biasing, Base bias, emitter feedback bias, collector feedback bias, 
	voltage divider bias, Load Line and operating point.

	Integrated ckt-Ideal op-amp. Analysis of principle of integration simple op-amp. 
	ckt. Intro. to Digital Integrated circuits light source-LED.

	Photo detectors. Photo diode and phototransistors. 
	Thyristors-- Introduction to thyristor family, SCR theory of operation, 
	SCR characteristics and ratings

	TRIAC- Theory of operation, Characteristics and ratings voltage control 
	by SCR and TRIAC.

	UJT-Introduction, Basic theory of operation, characteristics and structure, 
	complementary and programmable UJT realisaton oscillator.

Texts / References