228. Solid State Physics and Devices

	Energy Bond in solids, Fermi-Dirac function (derivation not required) 
	Fe-rrni level.. Density of state (derivation - not required).

	Conduction in Semi-conductor. Semi-conductor material, nj type and p4yp  
	semi-conductor. Charge carriers, excess carriers, 
	Carrier concentrations in an intrinsic serni.-conductor.

	Basic Equation for semi-cQnductor Device ope.ration- Current.. density 
	equation and its application in the stu4y - of -decay of photo excited carriers, 
	steady-state injection, Transient and steady state Diffusion.

	P-N Junction Diode   Dipletion. layer, - Band structtjre of an open circuit, 
	current components, quantitative theory of P-N diode current, 
	volt-ampere characteristic (qualitative. stu.dy), characteristics of tunnel diode

	P~~oto diode- Photo conductivity, volt-ai~were characteristic of 
	semi-conductor photo d-i()d~.'  ',.-olar cell.

	Light Emitting Diode (LED)LED materials  Fiber optic communication.  
	Bipolar  Junction  Transistors  (BJT)-Fundamentals of BJT operation, 
	charge trapspo~ in a BJT, Amplification with BJT. BJT fabrication. 
	Field Effe~ Transistors (FET)- The junction FET (JFET), 
	the metal s·n~~ctors FET, MOSFET, The ideal MOS capacitor, IGFET

	Unijunction transistor (UJT).



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