225. Basic Electronics

FIRST TERM:
	PN junction, Depletion layer, Barrier potential, Forward and reverse bias, 
	Breakdown voltage, piv, Characteristics of p-n junction diode, knee voltage, 
	load line; and opting Point Ideal p-n junction diode,, 
	junction capacitance, zener dioi~.

	Rectifiers and filters-Half wave, centre tap full wave and bridge rectifier, 
	percentage of reguletion, piv, ripple factor, C, RC, LC and PI filter, 
	voltage doubler, clipping and clamping ckt,. voltage regulation.

	BJT- Introduction, Basic theory of operation of PNP ad NPN transistor,
	V-l characteristics, CB, CE and CC configora~tion, junction FET- Introduction, 
	Theory of operation, JFET Parameters, and  JFET Amplifiers. 
	MOSFET- Introduction, Theory of operation, MOSFET parameters, application.
	Graphical analvsis of BJT & FFT circuits, Linear medels of ~JT & FET. 
	Pulse and large sigi'al models of BJT & FET.

SECOND TERM:
	Basic BJT & FET Amplifiers
	Introductory idea of multistage & feedback amplifiers

	Biasing, Base bias, emitter feedback bias, collector voltage divider bias, 
	Load line and operati~ point.

	Integrated ckt, Analysis of principle of integrato~  
	lntr~~ion to Digital Integrated circuits, 
	Ideal OP-amp, Analysis of operational amplifier circuits: 
	GQmp.arator, voltage, follower, Inverting & non-inverting amplifier, 
	Summing & Subtracting amplifier, l'rt~atm<.~>~& differentiator. 
	Photo detectors, LED Photo diode ~ photo transistors. 
	Thyristors- I' 'troduction to thynst~ familV, SCR theory of operation, 
	5CR characteristics and r~tiirrg:%5 feedback bias,

	TRIAC- Theory of operation, Characteristics. a~d ~ control by SCR and TRIAC;

	UJT- Introduction, Basic theory of operation  characteristics and structure, 
	complementary and programmable L)JT relaxation oscillator.

Texts / References
	1.	Electronic Device- Flayd,
	2.	Integrated Circuits & Semiconductor Devices   DEBOO BURROUS